| MRC | Criteria | Characteristic |
|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | AGM-130/TVGS" |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE" |
| CQSJ | INCLOSURE MATERIAL | SILICON" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT-ERASEABLE PROGRAMMABLE READ ONLY MEMORY" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY" |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS NOMINAL ACCESS" |
| CZER | MEMORY DEVICE TYPE | EPROM" |
| FEAT | SPECIAL FEATURES | ALTERED ITEM, MAKE FROM P/N 5962-8953702YX, DWG NAME MICROCIRCUITS, MEMORY, DIGITAL CMOS, 16K X 8 UV EPROM, MONOLITHIC SILICON; ENDURANCE 25 CYCLES/BYTE, MINIMUM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | AGM-130/TVGS" |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE" |
| CQSJ | INCLOSURE MATERIAL | SILICON" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT-ERASEABLE PROGRAMMABLE READ ONLY MEMORY" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY" |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS NOMINAL ACCESS" |
| CZER | MEMORY DEVICE TYPE | EPROM" |
| FEAT | SPECIAL FEATURES | ALTERED ITEM, MAKE FROM P/N 5962-8953702YX, DWG NAME MICROCIRCUITS, MEMORY, DIGITAL CMOS, 16K X 8 UV EPROM, MONOLITHIC SILICON; ENDURANCE 25 CYCLES/BYTE, MINIMUM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
