Welcome to our online Request for Quote (RFQ) service, where you can fill out and submit the form provided below to obtain tailored procurement options from our team of industry experts. You have taken interest in part number SM-A-595820-1, which is a Semiconductordeviceset item from Solid State Devices Inc that is listed with the NSN 5961-00-526-7975 for quick identification. Should you wish to move forward with quotation for this listing, be sure that you supply us with key details like your target pricing, quality, and delivery date. This information is what we will base presented quotes on, with responses offered shortly after the receipt and review of each form.
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To ensure that customers only procure exact items of need, we present our offerings with as much relevant data as possible. For example, part number SM-A-595820-1 was specifically produced by Solid State Devices Inc under the CAGE Code 30043, providing traceability. Furthermore, with the NSN 5961-00-526-7975, one can also determine that this listing falls under Federal Supply Class (FSC) 5961 Semiconductor Devices and Associated Hardware. Alongside such details, all purchases will come delivered with any applicable qualifying certifications, furthering the reliability of our purchasing options. With this in mind, be sure to request a quote on part number SM-A-595820-1, and we will be in touch.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-526-7975 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 005267975 | 0 | N | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | U | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| FA3413U | 2 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.160 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM 1ST SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM 2ND SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM 3RD SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.075 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 1ST SEMICONDUCTOR DEVICE DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 2ND SEMICONDUCTOR DEVICE DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 3RD SEMICONDUCTOR DEVICE DIODE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 3 SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,REPETITIVE,MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 450.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER 1ST SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 3RD SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET 2ND SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET 1ST SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
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