Welcome to our online Request for Quote (RFQ) service, where you can fill out and submit the form provided below to obtain tailored procurement options from our team of industry experts. You have taken interest in part number TS268EU, which is a Test Set Semiconduc item from Voron Electronics Corp that is listed with the NSN 6625-00-923-6534 for quick identification. Should you wish to move forward with quotation for this listing, be sure that you supply us with key details like your target pricing, quality, and delivery date. This information is what we will base presented quotes on, with responses offered shortly after the receipt and review of each form.
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To ensure that customers only procure exact items of need, we present our offerings with as much relevant data as possible. For example, part number TS268EU was specifically produced by Voron Electronics Corp under the CAGE Code 94518, providing traceability. Furthermore, with the NSN 6625-00-923-6534, one can also determine that this listing falls under Federal Supply Class (FSC) 6625 Electrical and Electronic Properties Measuring and Testing Instruments. Alongside such details, all purchases will come delivered with any applicable qualifying certifications, furthering the reliability of our purchasing options. With this in mind, be sure to request a quote on part number TS268EU, and we will be in touch.
| MRC | Criteria | Characteristic |
|---|---|---|
| ABRY | Length | 8.187 INCHES NOMINAL |
| MRC | Decoded Requirement | Clear Text Reply |
| HGTH | Height | 3.625 INCHES NOMINAL |
| AQXZ | Operating Test Capability | FRONT RESISTANCE-NOT GREATER THAN 0.5 KILOHM FOR A GOOD CRYSTAL; BACK RESISTANCE-RATIO OF BACK TO FRONT RESISTANCE GREATER THAN 10 TO 1 FOR A GOOD CRYSTAL; BACK CURRENT-CRYSTAL SHOULD NOT INDICATE CURRENT GREATER THAN - CRYSTAL IN21 AND IN23,IN23A,IN25,IN21A AND IN23B,IN21B,IN26 WE,IN26 SYL,IN78 SYL - CURRENT D. C. 0.400 MA,0.300 MA,0.250 MA,0.175 MA,0.125 MA,0.110 MA,0.230 MA,0.160 MA |
| ABGL | Width | 6.000 INCHES NOMINAL |
| AQXY | Test Type For Which Designed | FRONT RESISTANCE OF CRYSTAL; BACK RESISTANCE OF CRYSTAL; BACK CURRENT OF CRYSTAL |
| ALSF | Internal Battery Accommodation | INCLUDED |
| ANPZ | Inclosure Feature | SINGLE ITEM W/CARRYING CASE |
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